ABOUT GERMANIUM

≤ 0.15) is epitaxially developed over a SOI substrate. A thinner layer of Si is developed on this SiGe layer, then the composition is cycled via oxidizing and annealing stages. Due to preferential oxidation of Si in excess of Ge [sixty eight], the first Si1–Charge. Interestingly, the team discovered that expanding the Si cap thickness past 0.6